Therefore, there will be no voltage drops across either resistor and the voltage at the base and at theĬollector leads of the transistor will be 12V.įig. Since the collector diode is not forward biased, it is OFF and there can be neither collector current nor base current. 11 (i) shows an open emitter failure in a transistor. We shall discuss the circuit behaviour in each case.įig. What will be the circuit behaviour in each case ?įig 11 shows the open circuit failures in a transistor. 11 shows the open circuit failures in a transistor. Solution :įor this transistor, if the base current is allowed to exceed 1.67 mA, the collector current will exceed its maximum rating of 500 mA and the transistor will probably be destroyed. Q19. A transistor has the following ratings : I C (max) = 500 mA and β max = 300.ĭetermine the maximum allowable value of I B for the device. Then determine the value of I C using both the α rating and β rating of the transistor. Determine the α rating of the transistor. 10 (ii) shows the various currents and voltages along with polarities. 10 (i) shows the transistor circuit while Fig. The transistor is of silicon and has β = 150. Q17. Determine V CB in the transistor circuit shown in Fig. I CBO) is multiplied by β in the collector as shown in Fig. When the transistor is in CE arrangement, the base current (i.e. The leakage current ICBO is the current that flows through the base-collector junction when emitter is open as shown is Fig. Q16. Using diagrams, explain the correctness of the relation I CEO = (β + 1)I CBO. For a certain transistor, I B = 20 μA I C = 2 mA and β = 80. The transistor is connected in CB arrangement, what will be the leakage current? Given that β = 120. Q14. The collector leakage current in a transistor is 300 μA in CE arrangement. A small leakage current I CBO flows due to minority carriers. When the emitter circuit is open as shown in Fig.7 (i), the collector-base junction is reverse biased. Find α, I E and I B when collector current is 1 mA. When the base is disconnected and the same voltage is applied between collector and emitter, the current is found to be 20 μA. With collector positive, a current of 0.2 μA flows. A voltage of 5 V is applied between collector and base. Q13. An n-p-n transistor at room temperature has its emitter disconnected. 6 shows the required common emitter connection with various values. If α = 0.96, determine : (i) collector-emitter voltage (ii) base current. Q12. A transistor is connected in common emitter (CE) configuration in which collector supply is 8 V and the voltage drop across resistance R C connected in the collector circuit is 0.5 V. The voltage drop across RC (= 1 kΩ) is 1 volt. 5 shows the required common emitter connection. Find the base current for common emitter connection. Q11. For a transistor, β = 45 and voltage drop across 1kΩ which is connected in the collector circuit is 1 volt. 8.20 shows the conditions of the problem. Hence determine the value of I C using both α and β rating of the transistor.įig. Q10. Find the α rating of the transistor shown in Fig. Q9. Calculate I E in a transistor for which β = 50 and I B = 20 μA. Since the transistor is of silicon, V BE = 0.7V.Īpplying Kirchhoff’s voltage law to the emitter-side loop,we get,Īpplying Kirchhoff’s voltage law to the collector-side loop, we have, Saving Earth Britannica Presents Earth’s To-Do List for the 21st Century.Q7. For the common base circuit shown in Fig.Britannica Beyond We’ve created a new place where questions are at the center of learning.100 Women Britannica celebrates the centennial of the Nineteenth Amendment, highlighting suffragists and history-making politicians.
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